| 摘要 |
PROBLEM TO BE SOLVED: To prevent formation of a thick covering film on a vast and large pattern, by forming a flow fill-CVD insulating film on a substrate having unevenness step-differences, by using chemical vapor deposition and performing isotropic plasma etching treatment in the same reaction system. SOLUTION: A BASE-SiO2 film 2 is deposited to be about 1,000Åthickness on a wiring pattern of a substrate having unevenness step-differences, and continuously, a flow fill-CVD film is deposited to be about 7,000Åthickness. Isotropic plasma etching of the flow fill-CVD film of about 7,000Åin thickness is performed, a vast protruding part 1 is etched back, flow fill-CVD residual film quantity of the vast protruding part 1 is eliminated, and a shape where the film is left only in a recessed part is made. The flow fill-CVD film is re- deposited to be about 5,000Åthickness and etched. This process is repeated several times, to deposit a CAP-SiO2 film 3.
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