Single crystal, especially silicon single crystal, is grown under neck growth conditions of high pulling speed relative to the phase boundary axial temperature gradient

摘要

A single crystal growth process, in which the crystal neck portion is grown at a high ratio of pulling speed to phase boundary axial temperature gradient, is new. A single crystal growth process comprises growing the neck portion under conditions in which the quotient V/G(r) is greater than a constant Ckrit with a value of 1.3/*10<-3> cm<2>/K.min., where V = pulling speed, G(r) = axial temperature gradient at the solid/liquid phase boundary and r = radial distance from the center of the thin neck crystal.