METHOD FOR MAKING AN INTEGRATED CIRCUIT CONTAINING AN ALIGNMENT MARK AREA
摘要
<p>The invention concerns a method for making an integrated circuit which consists: in etching on a silicon substrate at least an alignment mark area provided with aligning grooves for a photorepeater; in depositing a boundary layer on the silicon substrate; in etching trenches designed to form insulating zones; then in depositing a silicon oxide layer on the circuit; and in etching the oxide layer over the whole alignment mark area.</p>
