SEMICONDUCTOR LASER DEVICE

摘要

A semiconductor laser device (20) has a multilayer structure including an n-InP clad layer (22), a SCH-MQW active layer (23), a first p-InP clad layer (24), a multilayer film (25) of p-AllInAs layer/p-AlAs layer, a second p-InP clad layer (26), and a p-GaInAs contact layer (27), all formed in multilayer on an n-InP substrate (21). The multilayer film (25) has a structure in which p-AllInAs layers (25a) and p-AlAs layers (25b) are alternated. Of the multilayer structure, the upper portion of the first p-InP clad layer, the multilayer film, the second p-InP clad layer, and the p-GaInAs contact layer are formed into stripelike ridges (32) having widths of about 10 mu m. The side walls of the ridges of the multilayer film is an Al oxide layer (28) formed by selective oxidation of Al in the multilayer film. Thus, a semiconductor laser device having a current/optical confinement structure by virtue of an Al oxide layer on an InP substrate is provided.