| 摘要 |
<p>A proximity exposure method in which a mask pattern can be projected onto a predetermined area of a workpiece even if the light is allowed to be incident obliquely on the mask is achieved in a proximity exposure device in which a mask and a workpiece are arranged with a predetermined gap between them and the workpiece is irradiated obliquely with light via the mask, based on the gap size G between the mask and the workpiece, on the angle of incidence delta of the irradiation light with respect to the mask and based on the angle of irradiation PHI with which the irradiation light is incident with respect to the X-direction of the mask pattern, the displacement position of the mask pattern to be projected is computed, and according to the result of this computation, the workpiece is moved and the light is emitted. In this way, the mask pattern can be projected onto the predetermined position of the workpiece and the desired area can be irradiated with light. <IMAGE></p> |
