发明名称 CARBON-COATING FILM
摘要 PROBLEM TO BE SOLVED: To form a thin film having high adhesion strength to the surface where the film is formed, by applying microwaves having at least first and second square pulse forms with different waveheight to generate plasma of the reaction gas. SOLUTION: A CVD system which produces high density plasma by the interaction of pulsed microwaves and a magnetic field is used. By controlling the pulses in such a manner that first peaks are higher than second peaks and the second peaks are 5/6 of the first peaks, SP3 bonds which are preferable for the formation of a hard carbon film are increased while SP2 bonds having weak bonding force are removed. In order to produce and keep the high density plasma at high pressure, electron cyclotron resonance is first produced at low vacuum as 1×10-4 to 1×10-5 Torr in the space with a column, and then the gas is introduced. The plasma state is maintained while pressure is changed to high pressure to 0.03 to 30 Torr to change the product gas into high density to form a film. For example, when diamond is formed, columnar grains 29 of diamond having large particles are grown on a substrate 10.
申请公布号 JP2000109394(A) 申请公布日期 2000.04.18
申请号 JP19990256829 申请日期 1999.09.10
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 MIYANAGA SHOJI;INOUE TORU;YAMAZAKI SHUNPEI
分类号 C30B29/04;C23C16/27;C23C16/511;C23C16/515;C30B25/02;C30B30/04;(IPC1-7):C30B29/04 主分类号 C30B29/04
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