发明名称 Interlayer dielectric for passivation of an elevated integrated circuit sensor structure
摘要 An integrated circuit sensor structure. The integrated circuit sensor structure includes a substrate which includes electronic circuitry. An interconnect structure is adjacent to the substrate. The interconnect structure includes conductive interconnect vias which pass through the interconnect structure. A dielectric layer is adjacent to the interconnect structure. The dielectric layer includes a planar surface, and conductive dielectric vias which pass through the dielectric layer and are electrically connected to the interconnect vias. The dielectric layer further includes an interlayer planarization dielectric layer adjacent to the interconnect structure, and a passivating layer adjacent to the interlayer planarization dielectric layer. The integrated circuit sensor structure further includes sensors adjacent to the dielectric layer. The interconnect vias and the dielectric vias electrically connect the electronic circuitry to the sensors.
申请公布号 US6051867(A) 申请公布日期 2000.04.18
申请号 US19990306238 申请日期 1999.05.06
申请人 HEWLETT-PACKARD COMPANY 发明人 THEIL, JEREMY A.;RAY, GARY W.;PERNER, FREDERICK A.;CAO, MIN
分类号 H01L21/316;H01L21/768;H01L23/522;H01L27/146;H01L31/02;(IPC1-7):H01L33/00 主分类号 H01L21/316
代理机构 代理人
主权项
地址