发明名称 |
Repairable semiconductor memory circuit having parrel redundancy replacement wherein redundancy elements replace failed elements |
摘要 |
The present disclosure relates to semiconductor memories and more particularly, to an improved method and apparatus for replacing defective row/column lines. In accordance with the present invention, a high replacement flexibility redundancy and method is employed to increase chip yield and prevent sense amplifier signal contention. Redundancy elements are integrated in at least two of a plurality of memory arrays, which don't share the sense amplifiers. Thus, no additional sense amplifiers are required. A defective row/column line in a first array or block is replaced with a redundant row/column line from its own redundancy. A corresponding row/column line whether defective or not is replaced in a second array or block, which does not share sense amplifiers with the first block. The corresponding row/column is replaced to mimic the redundancy replacement of the first block thereby increasing flexibility and yield as well as preventing sensing signal contention.
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申请公布号 |
US6052318(A) |
申请公布日期 |
2000.04.18 |
申请号 |
US19980218561 |
申请日期 |
1998.12.22 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT;INTERNATIONAL BUSINESS MACHINES, CORP. |
发明人 |
KIRIHATA, TOSHIAKI;DANIEL, GABRIEL |
分类号 |
G11C11/401;G11C29/00;G11C29/04;H01L21/82;H01L21/8242;H01L27/108;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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