发明名称 Method and apparatus to compensate for non-uniform film growth during chemical vapor deposition
摘要 An apparatus for heating, according to a predetermined heating profile, a surface carrying a film. The invention includes a source of radiant energy. The source of radiant energy has several peak wavelengths, with each peak wavelength having a unique absorption profile related to the thickness of the film. The source of radiant energy is positioned to direct radiant energy toward the surface. Means are included for holding the source of radiant energy in a manner such that the combination of peak wavelengths produce the desired predetermined heating profile.
申请公布号 US6051823(A) 申请公布日期 2000.04.18
申请号 US19970988261 申请日期 1997.12.10
申请人 MICRON TECHNOLOGY, INC. 发明人 SANDHU, GURTEJ S.
分类号 C23C16/44;C23C16/455;C23C16/46;C23C16/48;C23C16/52;C30B25/10;H01L21/00;(IPC1-7):H01L21/20;H05B3/02;F27B5/04 主分类号 C23C16/44
代理机构 代理人
主权项
地址