发明名称 |
Thin film forming apparatus |
摘要 |
There is provided a thin film forming apparatus in which plasma of high frequency is made of raw material gas in a film forming chamber 7, a thin film is formed on a surface of a substrate 12 in the film forming chamber 7 by the plasma of high frequency, and a characteristic of the thin film is controlled by irradiating ion beams 4 onto the surface of the substrate 12 at the same time, characterized in that: the substrate 12 is composed of a square plate having a regular square surface or a rectangular surface; and the thin film forming apparatus is provided with a high frequency electrode 13 for forming the plasma of high frequency into a cube or a rectangular parallelepiped to cover an overall surface of the substrate 12, on the surface side of the substrate 12.
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申请公布号 |
US6051120(A) |
申请公布日期 |
2000.04.18 |
申请号 |
US19980198584 |
申请日期 |
1998.11.24 |
申请人 |
NISSIN ELECTRIC CO., LTD. |
发明人 |
KISHIDA, SHIGEAKI;MIKAMI, TAKASHI;KIRIMURA, HIROYA;OGATA, KIYOSHI |
分类号 |
C23C14/32;C23C16/50;C23C16/505;H01J37/32;H01L21/205;H01L21/31;(IPC1-7):C23C14/46 |
主分类号 |
C23C14/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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