| 摘要 |
The invention relates to a process for producing a semiconductor device comprising the following steps. A first insulating film and a second insulating film are formed along a shape of the gate electrode on the logic region of the semiconductor substrate. A contact hole is formed in the first and second insulating films in the cell region, and a side wall comprising a material preventing its own silicidation is formed on the inner wall thereof. A conductive material is embedded in the contact hole through a side wall to form a plug, and then the second insulating film is removed to expose the plug and the first insulating film. A spacer side wall is formed on the side wall of the gate electrode in the logic region, and the surface of the semiconductor substrate is exposed, followed by forming a silicide layer thereon. A first interlayer insulating film is formed on the semiconductor substrate, so as to flatten the surface and the upper surface of the plug is exposed.
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