发明名称 Methods of forming conductive components and methods of forming conductive lines
摘要 The invention encompasses methods of forming conductive components and methods of forming conductive lines. In one aspect, the invention includes a method of forming a conductive component comprising: a) anisotropically etching a conductive material into a conductive component shape having at least one sidewall, and forming an etch blocking layer over the sidewall during the anisotropic etching; and b) removing the etch blocking layer with an etchant comprising fluorine and a noble element. In another aspect, the invention includes a method of forming a conductive line comprising: a) forming a layer of conductive material; b) forming a masking layer over a portion of the layer of conductive material in the shape of a conductive line; c) anisotropically etching the conductive material with the masking layer in place to form a conductive line beneath the masking layer, the conductive line having sidewalls, a blocking layer forming over the sidewalls during the anisotropic etching; and d) removing the blocking layer with an etchant comprising fluorine and a noble element.
申请公布号 US6051502(A) 申请公布日期 2000.04.18
申请号 US19970953910 申请日期 1997.10.20
申请人 MICRON TECHNOLOGY, INC. 发明人 FRANKAMP, HARLAN H.;BLALOCK, GUY T.
分类号 H01L21/28;H01L21/02;H01L21/302;H01L21/3065;H01L21/3213;(IPC1-7):H01L21/311 主分类号 H01L21/28
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