| 摘要 |
Disclosed is a method of fabricating a semiconductor device in which a plurality of FETs (Field Effect Transistors) having different threshold values are formed on the same substrate. The method includes the steps of: implanting ions of an impurity having a first conducting type in active regions of the plurality of FETs, to simultaneously form channel layers in the active regions; and implanting ions of an impurity having a second conducting type at bottom portion of the channel layers, to simultaneously form buried layers at the bottom portions of the channel layers; wherein a carrier concentration distribution in the active region of a specific one of the plurality of FETs is changed depending on a desired threshold value of the specific FET. In the semiconductor device fabricated in accordance with the method, each of the FETs is allowed to exhibit a desired electric characteristic and a desired controllability of a threshold value.
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