发明名称 Method of forming a titanium film and a barrier metal film on a surface of a substrate through lamination
摘要 A method of forming a titanium film and a titanium nitride film on a substrate by lamination which method is capable of suppressing contamination of the substrate due to the by-product and of reducing a contact resistance value of the titanium film. By carrying out the step of forming a titanium film on a surface of a substrate, the step of subjecting the substrate to the plasma processing in an atmosphere of the mixed gas of nitrogen gas and hydrogen gas, thereby nitriding a surface layer of the titanium film to form thereon a nitride layer, and the step of forming a barrier film (e.g., a titanium nitride film) on the titanium film having the nitride layer formed thereon, both the titanium film and the titanium nitride film are formed on the substrate by lamination.
申请公布号 US6051281(A) 申请公布日期 2000.04.18
申请号 US19970941272 申请日期 1997.09.30
申请人 TOKYO ELECTRON LIMITED 发明人 KOBAYASHI, YASUO;TADA, KUNIHIRO;YOSHIKAWA, HIDEKI
分类号 C23C16/34;H01L21/28;H01L21/285;H01L21/768;H01L23/522;(IPC1-7):C23C16/34 主分类号 C23C16/34
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