发明名称 |
Method of forming a titanium film and a barrier metal film on a surface of a substrate through lamination |
摘要 |
A method of forming a titanium film and a titanium nitride film on a substrate by lamination which method is capable of suppressing contamination of the substrate due to the by-product and of reducing a contact resistance value of the titanium film. By carrying out the step of forming a titanium film on a surface of a substrate, the step of subjecting the substrate to the plasma processing in an atmosphere of the mixed gas of nitrogen gas and hydrogen gas, thereby nitriding a surface layer of the titanium film to form thereon a nitride layer, and the step of forming a barrier film (e.g., a titanium nitride film) on the titanium film having the nitride layer formed thereon, both the titanium film and the titanium nitride film are formed on the substrate by lamination.
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申请公布号 |
US6051281(A) |
申请公布日期 |
2000.04.18 |
申请号 |
US19970941272 |
申请日期 |
1997.09.30 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
KOBAYASHI, YASUO;TADA, KUNIHIRO;YOSHIKAWA, HIDEKI |
分类号 |
C23C16/34;H01L21/28;H01L21/285;H01L21/768;H01L23/522;(IPC1-7):C23C16/34 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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