METHOD FOR PREPARING GATE OXIDE FILM OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for preparing gate oxide film of semiconductor device is provided to easily control the thickness of a gate oxide film and enhance the electrical characteristics of the gate oxide film by enhancing the insulation feature. CONSTITUTION: A method for preparing gate oxide film of semiconductor device comprises a nitrogen ion injecting step, a pad oxide film(2) removing step, a heat treatment step and a gate oxide film(3) growing step. In the nitrogen ion injecting step, a semiconductor device section is defined and nitrogen ion is injected into the semiconductor device section having a pad oxide film on a silicon wafer. In the pad oxide film removing step, the pad oxide film having nitrogen ions injected is removed. In the heat treatment step, the silicon wafer having the pad oxide film removed is treated by spike heat treatment. In the gate oxide film growing step, the gate oxide film is grown by thermal oxidation of the silicon wafer.