| 摘要 |
PURPOSE: A method for manufacturing semiconductor is provided to prevent the short channel effect by suppressing the diffusion of a second impurity area, and to simplify process by simultaneously forming second, third contact windows. CONSTITUTION: A method for manufacturing semiconductor comprises a step of forming a gate oxide film(55), a gate layer and first, second cap layers(59,61), a step of forming a mask layer, a step of forming a second conductive type high concentration area(67), a step forming a second conductive type low concentration area(69), a step of forming a second side wall(71), a step of forming a first contact hole, a step of forming a second layer insulation layer(79), and a step of forming second and third contact holes(81,83).
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