METHOD OF MANUFACTURING PERPENDICULAR FINE PATTERN BY USING TRI-LAYER RESIST OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of manufacturing a perpendicular fine pattern by using a tri-layer resist of a semiconductor device is provided to improve reliability by preventing a short circuit with a lower layer. CONSTITUTION: A method of manufacturing a perpendicular fine pattern by using a tri-layer resist(TLR) comprises the steps of: forming a conductive layer; forming the TLR including a middle thermal oxide(MTO) layer; and forming the MTO layer pattern with Ar, O2 and fluorine plasma gas by using a resist pattern on the lower layer of the TLR as an etching mask and etching side walls of the MTO layer by sputtering the Ar through increased O2 gas and radio frequency power.