| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to be able to assure lithography margin and sufficient electrostatic capacitance in an ultra integrated device such as 256M DRAM or more. CONSTITUTION: First, an interlayer dielectric is deposited on a substrate(21) in which a gate oxide(22), gate/source/drain areas(23,24) are formed. Then, a contact hole for exposing the source area is formed and a first semiconductor layer is deposited on the substrate including the contact hole. Next, a first oxide and cap poly is deposited on the contact hole and adjacent portion. Then, sides of the first insulating layer are etched to have a width narrower than that of the cap poly. Next, a second semiconductor layer is deposited on all surface of the substrate. Then, a sidewall spacer is formed on the sides of the second semiconductor layer and then a third semiconductor layer is deposited on all surface of the substrate. The third/second semiconductor layers and the cap poly is etched back as height as of the sidewall spacer. Then, a double cylinder type storage node(34) is formed by removing the first oxide, sidewall spacer and interlayer dielectric. Next, a dielectric film(35) and a plate node(36) are sequentially formed on the storage node.
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