BASE RESIN FOR PHOTORESIST USING ULTRA-VIOLET RAY FORFABRICATION OF SEMICONDUCTOR DEVICE, ITS MANUFACTURINGMETHOD AND PHOTORESIST USING ULTRA-VIOLET RAY COMPRISING THE BASE RESIN

摘要

PURPOSE: A structural resin for deep UV exposing photoresist composition and its preparation method are provided to use the resin to accomplish the exposure process by using deep UV as light source in the photolithographic process in the semiconductor production. CONSTITUTION: The structural resin comprises t-butoxycarbonyl oxystyrene (TBS) chain extended resin represented by the following formula 1 (R1 and R2 are hydrogen or alkyl group, carbonyl group or carboester group having C1-C20; n is natural number of 1,000-1,000,000). The resin is prepared by polymerizing TBS with inifer containing disulfide to synthesize TBS oligomer having TBS repeating units by deep UV as a light source in the lithographic process. The deep UV exposing photoresist composition comprises 10-20 wt.% of TBS resin; 5-10 wt.% of photosensitive agent such as quinone based compound; and 0.1-2 wt.% of additives and the balance of organic solvent.