| 摘要 |
<p>A method for producing a photovoltaic device comprises a base member (190) comprising a substrate (100) and a superposingly formed thereon a reflecting layer (101) and a reflection enhancing layer (102), and a pin structure formed of an n-type (103), i-type (104) and p-type (105) semiconductor layers containing silicon atoms and being non-single crystal as crystal structure, the pin structure being repeated at least once on said base member. The method comprises the steps of (a) depositing a material constituting the reflecting layer, at a substrate temperature of from 200 to 500 DEG C to form the reflecting layer; (b) lowering after the step (a) the substrate temperature to 100 DEG C or below; and (c) depositing after the step (b) a material constituting the reflection enhancing layer, on the reflecting layer at a substrate temperature of from 200 to 400 DEG C to form the reflection enhancing layer. <IMAGE></p> |
