| 摘要 |
PURPOSE: A method for forming metal wiring of semiconductor device is provided to form a metal wire having operating features. CONSTITUTION: A method for forming metal wire of semiconductor device comprises a step a lower insulation layer on a semiconductor substrate, a step of forming a contact hole and metal wiring groove, a step of forming a diffusion barrier layer, a step forming a bonding layer on the diffusion barrier layer, and a step of forming metal wire. The diffusion barrier layer is formed on all surface containing the contact hole and metal wire groove. The metal wire is formed with a copper film formed on the bonding layer.
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