| 摘要 |
PURPOSE: A method for forming electrode of semiconductor device is provided to prevent vertical deformation of interlayer dielectric, thereby enhancing the reliability and productivity of a contact electrode. CONSTITUTION: A method for forming electrode of semiconductor device comprises a step of forming plural flat interlayer dielectric(102), a step of forming a thermal oxide film(104) on the insulation film, a step of forming an opening connected to the active area of a semiconductor substrate, a step of ion-injecting conductive impurities, a step of forming a bonding film(110), a step of forming an impurity junction(111), and a step of forming a flat contact electrode.
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