| 摘要 |
PURPOSE: A method for manufacturing capacitor is provided to prevent the characteristic degradation, and to reduce costs by simplifying process. CONSTITUTION: A method for manufacturing capacitor comprises a step of forming a plug(5), a step of forming a lower electrode(6) on the plug and a portion of a second oxide film(10), a step of forming a dielectric film(7) and an upper electrode(8) on all surface of the lower electrode, and a step of forming a connecting film(9). The plug is poly crystalline silicon and connected to a particular region of a semiconductor device through a stacked structure. The connecting film connects the side of the plug and the bottom of the lower electrode after the second oxide film is removed.
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