METHOD FOR MANUFACTURING HIGH INTEGRATION MML SEMICONDUCTOR DEVICE

摘要

PURPOSE: A high integration MML device fabrication method is provided to prevent a damage due to thermal degradation of silicide layer by forming the silicide layer after performing a thermal treatment of high temperature. CONSTITUTION: A method comprises the steps of forming DRAM transistor(20) and a logic transistor(25) on a substrate(10) having a DRAM region and a LOGIC region, sequentially depositing a first and a second inter layer dielectrics(30,50) and forming a bit line(45) and a capacitor(55) on the DRAM region by using thermal treatment of high temperature, patterning the second and first inter layer dielectrics(30,50) using a PR pattern(65), and forming a titanium silicide layer(70) at a source and a drain regions of the logic transistor(25).