发明名称 |
METHOD FOR MANUFACTURING MML SEMICONDUCTOR DEVICES |
摘要 |
PURPOSE: A fabrication method of MML(Merged Memory Logic) devices is provided to prevent a short and a crack by improving a uniformity of roughness of a scribe region. CONSTITUTION: A method of MML device having a scribe region(b) and a die region(a)comprises the steps of forming a photoresist layer(15) having a contact portion(20) in the scribe region(b), growing a field oxide(25) on the scribe and the die regions of a semiconductor substrate(10) via the contact portion(20) of the photoresist layer(15), forming a silicide layer(30) on the semiconductor substrate except for the field oxide, and forming a metal layer(35) on the resultant structure of the die region(a).
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申请公布号 |
KR20000021068(A) |
申请公布日期 |
2000.04.15 |
申请号 |
KR19980040002 |
申请日期 |
1998.09.25 |
申请人 |
HYUNDAI ELECTRONICS IND. CO., LTD. |
发明人 |
YOON, CHI SUNG;MOON, WON |
分类号 |
H01L21/31;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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地址 |
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