发明名称 METHOD FOR MANUFACTURING MML SEMICONDUCTOR DEVICES
摘要 PURPOSE: A fabrication method of MML(Merged Memory Logic) devices is provided to prevent a short and a crack by improving a uniformity of roughness of a scribe region. CONSTITUTION: A method of MML device having a scribe region(b) and a die region(a)comprises the steps of forming a photoresist layer(15) having a contact portion(20) in the scribe region(b), growing a field oxide(25) on the scribe and the die regions of a semiconductor substrate(10) via the contact portion(20) of the photoresist layer(15), forming a silicide layer(30) on the semiconductor substrate except for the field oxide, and forming a metal layer(35) on the resultant structure of the die region(a).
申请公布号 KR20000021068(A) 申请公布日期 2000.04.15
申请号 KR19980040002 申请日期 1998.09.25
申请人 HYUNDAI ELECTRONICS IND. CO., LTD. 发明人 YOON, CHI SUNG;MOON, WON
分类号 H01L21/31;(IPC1-7):H01L21/31 主分类号 H01L21/31
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