METHOD FOR FORMING ACTIVE AREA OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming active area of semiconductor device is provided to enhance the reliability of the semiconductor device by easily ensuring an active area to minimize the failure rate. CONSTITUTION: A method for forming active area of semiconductor device comprises a step sequentially a nitration film(14) and an oxidation film(16) on a semiconductor substrate(10) having a bottom film(12) previously formed, and a step performing photoresist etching process in order to ensure an active area. The oxidation film is formed by thermal oxidation process, CVD(chemical vapor deposition) process or heat treatment process.