| 摘要 |
PURPOSE: A method for forming a multilayered interconnection of a semiconductor device is provided to reduce electromigration and to improve step coverage and isolation characteristics. CONSTITUTION: In the method, an oxide layer(2) formed on a semiconductor substrate(1) is selectively etched to form a contact hole, and a tungsten contact layer(3) is formed in the contact hole and on the oxide layer(2). Next, a TEOS-O3 layer(4) and an SOG layer(5) are sequentially deposited over the tungsten contact layer(3). Then, a portion of the SOG layer(5) is etched to expose the TEOS-O3 layer(4), and also the TEOS-O3 layer(4) is etched to expose the tungsten layer(3). Particularly, the etched width of the SOG layer(5) is greater than that of the TEOS-O3 layer(4). After that, the SOG layer(5) is contracted by O2 plasma, and the SOG layer(5) and the TEOS-O3 layer(4) are etched at edges thereof by sputtering. Thereafter, a Ti/TiN layer(7), an aluminum layer(9) and a tungsten layer(8) are sequentially formed over entire exposed surfaces and etched by CMP until the SOG layer(5) is exposed.
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