发明名称 SILICIDE TRANSPARENT ELECTRODE AND METHOD FOR PREPARING THE SAME
摘要 PURPOSE: A silicide transparent electrode and method for preparing thereof is provided to use the pixel electrode of a TFT-LCD, the pixel electrode of an organic EL, the pixel electrode of a FED, the pixel electrode of other display, the transparent electrode of a solar cell. CONSTITUTION: A method for preparing silicide transparent electrode comprises a step depositing metal having the thickness of 3A or less on an amorphous silicon thin film having the thickness of 40A and then forming silicide. The metal is one of Ni, Ti, Co, Fe, Cr, Pd and deposited by plasma deposition method. The silicide is formed by being applied electric field after being deposited as a thin film.
申请公布号 KR20000019978(A) 申请公布日期 2000.04.15
申请号 KR19980038345 申请日期 1998.09.17
申请人 JANG, JIN 发明人 CHANG, JIN;SHON, WOO SEONG
分类号 H01L21/28;(IPC1-7):H01L21/28 主分类号 H01L21/28
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