| 摘要 |
PURPOSE: A method for forming capacitor of analog semiconductor device is provided to simplify the process and to enhance the reliability by lowering the height of the capacitor. CONSTITUTION: A method for forming capacitor of analog semiconductor device comprises a step forming a field oxide film consisted of silicon oxide, a step of forming a field pattern portion, a step of forming a lower electrode(60), a step of removing an oxide film(40) except the upper part of the field oxide film, and a step of forming a gate electrode and an upper electrode. The field pattern portion is formed on the lower electrode area after a polymask is stacked. The lower electrode is formed by removing the portion except the field pattern portion using chemical mechanical polishing after the lower polysilicon layer is stacked.
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