METHOD FOR FORMING ISOLATION LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to improve the isolation characteristics by removing a defect generated on top of an isolation layer. CONSTITUTION: A method for forming an isolation layer(27) in the same height as a substrate is completed by repeating more than twice the processes of: forming an isolation trench by etching an isolation region on a semiconductor substrate(21); depositing an LPCVD(Low Pressure Chemical Vapor Deposition) TEOS(tetraethylortho silicate) layer(26a,26b) on the front surface in a first thickness; flatting the LPCVD layer and TEOS layer by etching The reliability of the isolation is increased by solving the problems such as an area reduction of an active region, a damage due to the plasma in STI process and the contamination of a metallic wire.