发明名称 SEMICONDUCTOR MEMORY DEVICE HAVING INNER POWER CIRCUIT FOR CONTROLLING VOLTAGE
摘要 PURPOSE: A semiconductor memory device having an inner power circuit for controlling a voltage is provided to control a size of an inner power voltage by using a control signal. CONSTITUTION: A semiconductor memory device having an inner power circuit for controlling a voltage comprises a reference voltage controller and generator(311), an inner power reference voltage generator(321), and an inner power voltage generator(331). The reference voltage controller and generator inputs an outer power voltage and a control signal, generates a reference voltage, and varies a level of the reference voltage according to the voltage level of the control signal. The inner power reference voltage generator generates a reference voltage for an inner power. The inner power voltage generator generates an inner power voltage.
申请公布号 KR20000021044(A) 申请公布日期 2000.04.15
申请号 KR19980039957 申请日期 1998.09.25
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YOON, SE SEUNG;HONG, SANG PYO
分类号 G11C11/413;G01R31/40;G11C11/401;G11C11/407;G11C29/50;(IPC1-7):G11C11/413 主分类号 G11C11/413
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