发明名称 |
SEMICONDUCTOR MEMORY DEVICE HAVING INNER POWER CIRCUIT FOR CONTROLLING VOLTAGE |
摘要 |
PURPOSE: A semiconductor memory device having an inner power circuit for controlling a voltage is provided to control a size of an inner power voltage by using a control signal. CONSTITUTION: A semiconductor memory device having an inner power circuit for controlling a voltage comprises a reference voltage controller and generator(311), an inner power reference voltage generator(321), and an inner power voltage generator(331). The reference voltage controller and generator inputs an outer power voltage and a control signal, generates a reference voltage, and varies a level of the reference voltage according to the voltage level of the control signal. The inner power reference voltage generator generates a reference voltage for an inner power. The inner power voltage generator generates an inner power voltage.
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申请公布号 |
KR20000021044(A) |
申请公布日期 |
2000.04.15 |
申请号 |
KR19980039957 |
申请日期 |
1998.09.25 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YOON, SE SEUNG;HONG, SANG PYO |
分类号 |
G11C11/413;G01R31/40;G11C11/401;G11C11/407;G11C29/50;(IPC1-7):G11C11/413 |
主分类号 |
G11C11/413 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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