MANUFACTURING METHOD OF A TRANSISTOR FOR HIGH SPEED DEVICES

摘要

PURPOSE: A method for manufacturing a transistor is to use a mask in formation of a deep implantation region in a P-well, thereby maintaining well concentration and reducing junction capacitance of source/drain. CONSTITUTION: A well region(2) is formed in a semiconductor substrate(1). A field oxide layer(3) is deposited on a portion of the semiconductor substrate to be formed of an isolation region. A photoresist pattern is formed to expose a portion to be a gate electrode for the entire structure. Impurities are implanted into the substrate to form a deep implantation region for threshold voltage using the photoresist pattern as a mask. A gate oxide layer is formed after the photoresist pattern is removed. A gate electrode is formed after a thin film for gate is deposited on the gate oxide layer. An LDD region(8) is formed in the well region using the gate electrode as a mask. A source/drain region is formed after a spacer oxide is formed on a sidewall of the gate electrode.