| 摘要 |
PURPOSE: A semiconductor device and manufacturing method thereof are provided to prevent the trap phenomenon of prescribed plasma charge within a gate insulation film to prevent the degradation of it and enhance the operation performance because the positive and negative components of the plasma charge generated in forming wiring lines. CONSTITUTION: A semiconductor device comprises a semiconductor substrate(100) having first and second conductive wells(102,104), gate wiring lines(110), source/drain areas(114), a first junction diode(118) of second conductive type, a second junction diode(120) of first conductive type, a first layer insulation film(122), plural conductive plugs(124), first metal lines(126a), and a second layer insulation film(128). |
