CLEANING COMPOSITION FOR SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SEMICONDUCTOR DEVICE USING SAID CLEANING COMPOSITION

摘要

PURPOSE: A cleaning composition and a method for manufacturing semiconductor devices using the same are provided to have a good cleaning effect and to prevent consumption of a hemispheric silicon layer upon a cleaning process. CONSTITUTION: A cleaning composition comprises HF of 0.01 - 10 weight%, H2O2 of 1 - 10weight%, isopropyl alcohol(IPA) of 0.01 - 30 weight% and H2O of a small quantity. A method for manufacturing semiconductor devices using the cleaning composition forms an insulating film(12) on a semiconductor substrate(10). A contact hole is formed at a specific location of the insulating film(12). A polysilicon layer as the first conductive layer is formed on the entire surface. A storage electrode pattern(14') is formed by a conventional photolithography process. The insulating film(12) is under-cut so that a portion of the bottom of the storage electrode pattern(14') can be exposed. After a dielectric film of a capacitor is formed on the exposed surface of the storage electrode pattern(14'), an upper electrode of a capacitor is formed. A hemispheric silicon layer (HSG,16) is formed on the exposed surface of the storage electrode pattern(14').