| 摘要 |
PURPOSE: A method for forming a diffusion barrier of tantalum silicon nitride(TaSiNx), a contact junction and a multi-level interconnection using the barrier, and related methods are provided to keep excellent electric characteristics after high-temperature heat treatment as well. CONSTITUTION: The TaSiNx diffusion barrier is deposited by sputtering, which uses a tantalum silicide(Ta5Si3) target with a nitrogen gas flow varying from 0 to 10 percent with respect to an entire gas flow including argon gas. Thus, the concentration of nitrogen in the diffusion barrier is controlled between 0 and 43 atomic percent. The TaSiNx diffusion barrier is deposited with a thickness of 500Å to 2000Å, and used for contact with silicon, gallium arsenic, gallium nitride, or indium phosphorus. In addition, the TaSiNx diffusion barrier(7) with 28 nitrogen atomic percent or below is used for the contact junction with a source(2) and a drain(3) to a temperature of 700°C. Furthermore, the TaSiNx diffusion barrier(7) with 40 nitrogen atomic percent or more is used for the multi-level interconnection including an interlayer dielectric layer(9) and a metallization layer(8) to a temperature of 900°C.
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