| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of enhancing the electrostatic capacity of a capacitor and preventing a short channel effect which occurs due to the decrease of a channel width. CONSTITUTION: A gate oxide(23) is formed on a semiconductor substrate(21) with a protrusion. Then, a sidewall spacer type gate electrode(25) is formed to surround the gate oxide(23) on the protrusion. Next, a first dopant region(21b) is formed on an upper surface of the protrusion, and a second dopant region(21c) is formed in the semiconductor substrate formed in an outer portion of the gate electrode(25). Then, an insulation film is formed on the substrate including the protrusion and the gate electrode(25). A contact region and insulating film patterns(26b) are formed by etching the insulation film. Then, a node electrode is formed and then an interlayer dielectric(30) is formed. Next, a plate electrode(31 ) and an insulating layer(32) are sequentially formed on the interlayer dielectric(30). A sidewall spacer(35) is formed on a sidewall of the contact hole and then a bit line is formed.
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