| 摘要 |
PURPOSE: A method for cleaning a contact hole in semiconductor devices is provided to be capable of easily removing impurities such as polymer, copper, gold, etc. existing at the sidewall of a native oxide film formed at the bottom of a contact hole and a contact hole. CONSTITUTION: A method for cleaning a contact hole maintains a wafer in which a contact hole is formed at the temperature of 20-25 Celsius. A cleaning solution in which isopropyl alcohol of 25-35 weight%, preferably 30 weight%, hydrogen peroxide of 2-4 weight%, preferably 3.0 weight%, hydrofluorine of 0.05-0.25 weight%, preferably 0.15 weight% and deionized water as a residual quantity are mixed is injected into a container. After a cleaning process is performed for 1-5 minutes, the wafer is taken out from the container. At this time, hydrofluorine functions to remove a native oxide film, polymer and metal impurities which are formed at the bottom of the contact hole.
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