发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A semiconductor memory device is provided to reduce a row operation cycle by pre charging a word line during a data read operation. CONSTITUTION: A semiconductor memory device comprises a plurality of sense amplifier array parts(11,12,13,14), a plurality of memory cell array parts(21,22,23,24), and a static ram cache part. A plurality of sense amplifier array parts(11,12,13,14) sense data, respectively. Data is read or written from or to the plurality of memory cell array parts(21,22,23,24). Data is temporally stored in the static ram cache part. A word line is pre charged during a data read operation by the use of a sense amplifier array part previously designated by a mode register among the sense amplifier array parts.
申请公布号 KR20000021180(A) 申请公布日期 2000.04.15
申请号 KR19980040146 申请日期 1998.09.26
申请人 HYUNDAI MICRO ELECTRONICS CO., LTD. 发明人 MIN, KYUNG SIK
分类号 G11C11/413;(IPC1-7):G11C11/413 主分类号 G11C11/413
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