METHOD OF MANUFACTURING RAISED SOURCE/DRAIN OF TRANSISTOR

摘要

PURPOSE: A method of manufacturing raised source/drain of a transistor is provided to minimize an area of a substrate when applying silicide to shallow source/drain regions. CONSTITUTION: A method of manufacturing raised source/drain comprises the steps of: forming a gate electrode layer composed of sequentially multi-laying a gate electrode and a gate mask; forming a spacer on both side walls of the gate electrode layer; forming source/drain regions by injecting impurity ions into both sides of the gate spacer on a semiconductor substrate; forming a silicon epitaxial layer on the source/drain regions on both sides of the gate spacer; and silicidying all of the silicon epitaxial layer.