| 摘要 |
PURPOSE: A method for manufacturing semiconductor device is provided to prevent the element failure generated because the ARC film on bit lines in etching a metal contact isn't completely removed, and to solve the mis align problem in etching the metal contact with a polysilicon spacer. CONSTITUTION: A method for manufacturing semiconductor device comprises a step of forming a first interlayer dielectric(1), a step of forming and patterning a conductive film and an ARC(anti-reflective coating) film(3), a step of forming a second interlayer dielectric(4), a step forming a capacitor contact and a metal contact, a step of forming a polysilicon layer and a sacrifice film for forming the capacitor, a step of forming a capacitor pattern and a polysilicon spacer, a step of completing a capacitor, a step of forming a third interlayer dielectric, and a step of completing the metal contact.
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