| 摘要 |
PURPOSE: A method for manufacturing MOS(metal oxide semiconductor) type transistor is provided to improve the hot carrier characteristic of the transistor by preventing electron form being trapped. CONSTITUTION: A method for manufacturing MOS type transistor comprises a step sequentially stacking a gate oxide film(30) and a polysilicon layer(40) on a semiconductor substrate(10), a step forming an LDD area, a step forming an argon ion injecting area, and a step forming source/drain(100,110). The LDD area is formed by injecting ion into an active region after a gate electrode is formed. Argon ion is injected into the inner side of the LDD area. The source/drain are formed by injecting ion into the LDD area after spacer films are formed on both sides of the gate electrode.
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