发明名称 |
METHOD OF MANUFACTURING SPUTTERING TARGET FOR MAKING SEMICONDUCTOR |
摘要 |
PURPOSE: A method of manufacturing a sputtering target for making a semiconductor is provided to control uniformity and size of crystalline particles inside a target by performing a rolling in a direction perpendicular to the direction of the prior rolling in every pass. CONSTITUTION: A method of manufacturing a sputtering target for making a semiconductor comprises the steps of: forming a nugget by vacuum-melting and casting an alloy; homogenizing the inter structure of the nugget; forming rolling material by repeatedly performing a rolling in various direction in every pass; performing a heat treatment of the rolling material; and manufacturing a sputtering target by the after-treatment of the heat-treated rolling material.
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申请公布号 |
KR20000019904(A) |
申请公布日期 |
2000.04.15 |
申请号 |
KR19980038250 |
申请日期 |
1998.09.16 |
申请人 |
KOREA INSTITUTE OF MANUFACTURING TECHNIQUE AND RESEARCH |
发明人 |
JO, HYEONG HO;JO, HUN;GO, MYEONG WAN |
分类号 |
H01L21/203;(IPC1-7):H01L21/203 |
主分类号 |
H01L21/203 |
代理机构 |
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地址 |
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