发明名称 METHOD OF MANUFACTURING SPUTTERING TARGET FOR MAKING SEMICONDUCTOR
摘要 PURPOSE: A method of manufacturing a sputtering target for making a semiconductor is provided to control uniformity and size of crystalline particles inside a target by performing a rolling in a direction perpendicular to the direction of the prior rolling in every pass. CONSTITUTION: A method of manufacturing a sputtering target for making a semiconductor comprises the steps of: forming a nugget by vacuum-melting and casting an alloy; homogenizing the inter structure of the nugget; forming rolling material by repeatedly performing a rolling in various direction in every pass; performing a heat treatment of the rolling material; and manufacturing a sputtering target by the after-treatment of the heat-treated rolling material.
申请公布号 KR20000019904(A) 申请公布日期 2000.04.15
申请号 KR19980038250 申请日期 1998.09.16
申请人 KOREA INSTITUTE OF MANUFACTURING TECHNIQUE AND RESEARCH 发明人 JO, HYEONG HO;JO, HUN;GO, MYEONG WAN
分类号 H01L21/203;(IPC1-7):H01L21/203 主分类号 H01L21/203
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