PLASMA ETCHING EQUIPMENT FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A plasma etching equipment for manufacturing a semiconductor device is provided to prevent a uniformity from reducing. CONSTITUTION: A dry etching process using an etching gas of a plasma state is performed in an etching chamber(10). A plurality of electrodes are provided within the etching chamber. A start point(32) and an end point(34) of a coil(30) are located on same vertical line and spaced at predetermined interval. The coil is wound on the etching chamber. The coil indicate a sinewave curve. The coil has a diameter of 14mm to 18mm. The coil is wound on the inside wall or the outside wall of the etching chamber. The coil is wound once. Thereby, a uniform plasma is formed at the interior of the etching chamber, so that a lowering of the uniformity is prevented.