发明名称 TREATING METHOD OF EXHAUST GAS IN PRODUCING SEMICONDUCTOR AND DEVICE THEREOF
摘要 PURPOSE: A treating method of exhaust gas is provided to make an after treatment of dust or treated gas and make heat analysis or heat oxidation exhaust gases generated in a producing process of a semiconductor harmless by oxidizing or analyzing in low cost. CONSTITUTION: A processing method of exhaust gas comprise the steps of: using a monoplane gas cylinder(1) as making monoplane as a generation source, diluting 20% of monoplane diluted by nitrogen supplied from the monoplane gas cylinder(1) by a nitrogen gas supplied from a nitrogen gas cylinder(3) using a blender(2), and mixing with air to obtain a mixture air containing about 1000ppm of monoplane. The blender(2) is composed of an air pump(4) for venting by compressing and in taking air, a T shaped connection(5) for dispensing to a treating room(8) by mixing compressed air vented from the air pump(4) and nitrogen gas supplied from the nitrogen gas cylinder(3) and compressed monoplane. Also, the treating room includes an inlet(6) and an inlet(7) of mixed gas communicated with the inlet(6) of the mixed gas. And at the rim of the lower part, an outlet(9) of treated gas is formed, for exhausting the treated gas obtained by heating the monoplane in the treating room.
申请公布号 KR20000020568(A) 申请公布日期 2000.04.15
申请号 KR19980039236 申请日期 1998.09.22
申请人 AWAJI TOSHIO 发明人 AWAJI TOSHIO
分类号 B01D46/28;B01D46/00;(IPC1-7):B01D46/28 主分类号 B01D46/28
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