DEFECT ANALYSING METHOD OF BARE WAFER

摘要

PURPOSE: A method for analyzing a defect formed on the bare wafer for semiconductor is provided to prevent an operating error from occurring in the succeeding process by performing the manufacturing process of the semiconductor in the bare wafer that is selected on the basis of the specification made by considering D-effect, the number of crystal originated particles(COP) and the break down voltage of an oxide film. CONSTITUTION: A bare wafer cut in the specific part of a silicon ingot is selected. The distribution of D-defects in the bare wafer is obtained. The distribution of COP is obtained. After an oxide film is formed on the bare wafer, the break down voltage of the oxide film is obtained. The relation of the distributions of the D-defects and the COP and the break down voltage of the oxide film is obtained.