| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to simplify the fabricating process and to improve isolation reliability between a plate capacitor electrode and a contact plug. CONSTITUTION: In the method, after a plurality of gates(3A¯3D) are formed on a substrate(1) and a field oxide layer(2), a node polysilicon layer(4) and a plate polysilicon layer(5) are deposited thereon to have a rugged surface profile and thereby to form a capacitor. Next, an oxide layer(6) and a BPSG layer(7) are sequentially formed over the capacitor. Then, a region where a contact hole is to be formed is defined, and the BPSG layer(7), the oxide layer(6) and the plate polysilicon layer(5) in the region are etched in sequence to form the contact hole exposing a corresponding portion of the substrate(1). Thereafter, a nitride layer is deposited over the BPSG layer(7) and in the contact hole, and then blanket-etched to form a nitride sidewall(8) on a side of the contact hole. The nitride sidewall(8) prevents a short circuit between the plate polysilicon layer(5) and a tungsten plug filled in the contact hole.
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