| 摘要 |
PURPOSE: A method for forming plug of semiconductor device is provided to increase overlay margin of following photo process and the margin between a gate and a plug due to the decrease of the final etching volume. CONSTITUTION: A method for forming plug of semiconductor device comprises a step forming plural gate electrodes(23), a step forming a cap gate insulation film(24), a step forming a first insulation film(22), a step forming a second insulation film on the first insulation film, a step forming a mask layer, a step forming a contact hole(28), and a step forming a conductive plug(29). The contact hole is formed by selectively removing the second and first insulation films in dry-wet-dry etching order.
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