METHOD FOR FABRICATING A CAPACITOR OF SEMICONDUCTOR DEVICE AND CAPACITOR THEREOF

摘要

PURPOSE: A method for forming a capacitor of a semiconductor device and the capacitor formed by the method are provided to improve reliability of the device by increasing capacitance of the capacitor through a stable increase in a surface area of a lower electrode material layer. CONSTITUTION: In the method, insulating layers(22) with an uppermost oxide layer(24) are formed in sequence on a semiconductor substrate(20) with a pattern formed thereon, and then a portion of the insulating layers(22) is removed to form a contact hole. Next, the lower electrode material layer(28) of the capacitor is formed over the oxide layer(24) and in the contact hole. The lower electrode material layer(28) is then removed to expose a certain portion of the oxide layer(24), and the oxide layer(24) is undercut from the exposed portion. Next, after cleaning a surface including a lower surface of the lower electrode material layer(28) exposed by undercut of the oxide layer(24), a hemispherical grain process is performed to increase the surface area. Thus, the resultant capacitor has a lower electrode with a hemispherical-shaped surface.