| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is to pattern a gate electrode before a step difference of an upper electrode of a capacitor is formed, thereby minimizing variation of critical dimension, and to minimize a distance between the gate electrode and the capacitor, thereby increasing integration degree and yields. CONSTITUTION: A gate insulating layer(13), the first conductive substance for gate electrode, a capacitor insulating layer and the second conductive substance for an upper electrode of a capacitor are successively formed on a semiconductor substrate(11) in which an isolation insulating layer(12) is formed. The first mask pattern for capacitor electrode is formed on the second conductive substance. The second substance and the capacitor insulating layer are etched to form a pre-gate pattern and a pre-upper electrode pattern of capacitor. The second mask pattern is formed on the pre-upper electrode. The first substance and the pre-upper electrode are etched to form the gate electrode and lower electrode of capacitor, and upper electrode of capacitor, respectively.
|
