| 摘要 |
PURPOSE: A layer of tantalum capacitor is provided to have low resistance. CONSTITUTION: Forming process(S1), sintering process(S2), transforming process(S3), and plastic deformation process(S4) are undertaken in order like the method for previous tantalum capacitor. But in this method, the temperatures, 180°C, 250°C and 180°C, at the furnaces for this process, which are 30-40°C higher than at normal furnaces are set up. Tantalum devices is supposed to be stayed for 2-3 minutes at each furnace and get heat treatment. The heat higher, the values for non-resistance is decreasing. Because the layer of manganese dioxide gets damage at 260°C, the maximum temperature at the second furnace is set up to below 250°C. |
